http://www.ingaasmanufacturing.com It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. en-us Fri, 03 Sep 2010 01:11:52 CDT Fri, 03 Sep 2010 01:11:52 CDT http://www.ingaasmanufacturing.com/ It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. Fri, 03 Sep 2010 01:11:52 CDT http://www.ingaasmanufacturing.com/articles/43535/What-is-the-material-INGAAS?... Indium gallium arsenide (InGaAs) is a semiconductor composed of indium, gallium and arsenic. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. InGaAs bandgap also makes it the detector material of choice in optical fiber comm... 2009-11-19 http://www.ingaasmanufacturing.com/headlines/news/ News Headline :It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. Fri, 03 Sep 2010 01:11:52 CDT http://www.ingaasmanufacturing.com/resources/partners Other Resources :It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. Fri, 03 Sep 2010 01:11:52 CDT http://www.ingaasmanufacturing.com/information/contact Contact us :It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. Fri, 03 Sep 2010 01:11:52 CDT